rev.2.00, jun.25.2004, page 1 of 9 H5N2305PF silicon n channel mos fet high speed power switching rej03g0026-0200z rev.2.00 jun.25.2004 features ? low on-resistance ? low leakage current ? high speed switching outline 1 2 3 d g to-3pfm s 1. gate 2. drain 3. source
H5N2305PF rev.2.00, jun.25.2004, page 2 of 9 absolute maximum rating (ta = 25 c) item symbol rating unit drain to source voltage v dss 230 v gate to source voltage v gss 30 v drain current i d 35 a drain peak current i d (pulse) note1 140 a body-drain diode reverse drain current i dr 35 a body-drain diode reverse drain peak current i dr (pulse) note1 140 a avalanche current i ap note3 18 a channel dissipation pch note2 60 w channel to case thermal impedance ch-c 2.08 c /w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c
H5N2305PF rev.2.00, jun.25.2004, page 3 of 9 electrical characteristics (ta = 25 c) item symbol min typ max unit test condition drain to source breakdown voltage v (br)dss 230 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ??1 av ds = 230 v, v gs = 0 gate to source leak current i gss ??0.1 av gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 2.5 ? 4.0 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 22 38 ? s i d = 17.5a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.030 0.038 ? i d = 17.5a, v gs = 10 v note4 input capacitance ciss ? 5200 ? pf output capacitance coss ? 690 ? pf reverse transfer capacitance crss ? 50 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time td(on) ? 60 ? ns rise time tr ? 130 ? ns turn-off delay time td(off) ? 180 ? ns fall time tf ? 120 ? ns i d = 17.5 a r l = 5.7 ? v gs = 10 v rg = 10 ? total gate charge qg ? 105 ? nc gate to source charge qgs ? 25 ? nc gate to drain charge qgd ? 37 ? nc v dd = 160 v v gs = 10 v i d = 35 a body-drain diode forward voltage v df ? 0.92 1.4 v i f = 35 a, v gs = 0 note4 body-drain diode reverse recovery time trr ? 180 ? ns body-drain diode reverse recovery charge qrr ? 1.3 ? c i f = 35 a, v gs = 0 dif/dt = 100 a/ s notes: 4. pulse test
H5N2305PF rev.2.00, jun.25.2004, page 4 of 9 main characteristics 80 60 40 20 0 50 100 150 200 30 10 3 1 0.3 0.1 13 0.1 0.3 10 30 100 300 1000 100 80 60 40 20 0 4 8 12 16 20 100 80 60 40 20 0 246810 0.03 0.01 100 300 1000 ta = 25 c v = 5 v gs 7 v tc = 75 c 25 c -25 c channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v = 10 v ds pulse test 100 s 1 ms pw = 10 ms (1shot) dc operation (tc = 25 c) 10 s 5.5 v 6 v 8 v 10 v operation in this area is limited by r ds(on)
H5N2305PF rev.2.00, jun.25.2004, page 5 of 9 2 1.6 1.2 0.8 0.4 0 48 12 16 20 1 20 300 1000 100 210 0.1 0.05 0.02 0.01 0.1 0.08 0.06 0.04 0.02 ?25 0 25 50 75 100 125 150 0 0.1 0.3 3 30 1000 100 20 50 5 10 2 0.5 1 0.2 0.1 1 10 300 100 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) 25 c tc = ?25 c 75 c ds v = 10 v pulse test v gs = 10 v pulse test 5 a pulse test pulse test v gs = 10 v,15v i = 35 a d 17.5 a 17.5 a i d = 35 a 5 a
H5N2305PF rev.2.00, jun.25.2004, page 6 of 9 0.1 0.3 1 3 10 30 300 100 100 1000 200 500 100 20 50 10 0 50 100 150 2000 5000 10000 1000 100 200 500 400 0 16 300 12 200 8 100 4 40 80 120 160 200 0 10000 1000 10 100 0.1 0.3 1 3 10 30 1000 100 300 20 50 10 v = 0 f = 1 mhz gs ciss coss crss i = 35 a d v dd v gs reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics di / dt = 100 a / s v = 0, ta = 25 c gs v = 160 v 100 v 50 v ds r t r t d(on) t d(off) t t f v = 10 v, v = 100 v pw = 5 s, duty 1% r = 10 ? gs dd g v = 160 v 100 v 50 v ds
H5N2305PF rev.2.00, jun.25.2004, page 7 of 9 0 0.4 0.8 1.2 1.6 2.0 100 80 60 40 20 v = 0 v gs 10 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test 5 4 3 2 1 -25 0 25 50 75 100 125 150 0 case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v gs(off) (v) v = 10 v ds vin monitor d.u.t. vin 10 v r l v = 100 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 ? 90% 10% t f switching time test circuit waveform 5 v i = 10 ma d 1 ma 0.1 ma
H5N2305PF rev.2.00, jun.25.2004, page 8 of 9 0.3 0.1 0.03 0.01 3 1 0.003 0.001 10 100 1 m 10 m 100 m 1 10 10 0 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 2.08 c/w, tc = 25 c tc = 25 c pulse width pw ( s ) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot puls e
H5N2305PF rev.2.00, jun.25.2004, page 9 of 9 package dimensions 0.66 15.6 0.3 5.5 0.3 3.2 0.3 5.45 0.5 4.0 0.3 5.0 0.3 2.7 0.3 19.9 0.3 21.0 0.5 1.6 0.86 3.2 + 0.4 ? 0.2 2.6 0.86 5.45 0.5 5.0 0.3 + 0.2 ? 0.1 2.0 0.3 0.9 + 0.2 ? 0.1 package code jedec jeita mass (reference value) to-3pfm ? ? 5.2 g as of january, 2003 unit: mm ordering information part name quantity shipping container H5N2305PF-e 30 pcs plastic magazine note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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